http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I282036-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate | 2002-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d08bfbb914272a63018aee5ccc2bbb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234f320334f9a97fe9e39a3fe7148a86 |
| publicationDate | 2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I282036-B |
| titleOfInvention | Resist patterning process |
| abstract | A resist patterning process is provided comprising the steps of (a) applying a resist composition onto a substrate to form a resist film, (b) prebaking the resist film, (c) exposing the prebaked resist film to a pattern of radiation, (d) post-exposure baking the exposed resist film, (e) developing the resist film to form a resist pattern, and (f) post baking the resist pattern for causing thermal flow. The resist composition contains a polymer comprising structural units of formula [I] in a backbone and having acid labile groups on side chains as a base resin and a photoacid generator. X1 and X2 are -O-, -S-, -NR-, -PR- or -CR2-, R is H or C1-20 alkyl, and m is 0 or an integer of 1 to 3. The invention is effective for improving the degree of integration of semiconductor LSI. |
| priorityDate | 2001-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 506.