Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aafe0172ffd94d3486c518b0709bb2b3 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 |
filingDate |
2005-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa436387416bd136fdf4f3e6743e9537 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bb8f7b866e63bd1e1188b3b4e437e7a |
publicationDate |
2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I281188-B |
titleOfInvention |
Metal CMP slurry compositions that favor mechanical removal of metal oxides with reduced susceptibility to micro-scratching |
abstract |
Metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics are provided. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., >= 8 wt%) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, ...) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface. |
priorityDate |
2004-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |