http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I280649-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be47f531d5f84ba1c78a0092b006e79f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-34 |
| filingDate | 2005-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed5e99611075179a01f5c1421f96b336 |
| publicationDate | 2007-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I280649-B |
| titleOfInvention | Method for manufacturing high-performance thermoelectric semiconductor and the thermoelectric semiconductor device |
| abstract | This invention discloses a method for manufacturing high-performance thermoelectric semiconductor and the thermoelectric semiconductor device. Firstly, the 1st and 2nd ceramic layers are prepared. Heat-resisting copper foil conductors are individually formed in intervals and arranged in the inner lateral of the 1st and 2nd ceramic layers. Proper quantity of composite copper-welding agent is coated on the copper foil conductors and the copper foil conductors on the 1st and 2nd ceramic layers are staggered and overlapped. Secondly, a mold comprising holes is prepared corresponding to the copper foil conductor and the mold is arranged on the copper foil conductor of the 1st ceramic layer, so that the holes are corresponding to the copper foil conductors. Thirdly, p-type and n-type semiconductors with longer length are prepared. The p-type and n-type semiconductors are alternated and orderly inserted into the hole of the mold. Then high temperature is used to melt the composite copper-welding agent for serially connecting the p-type and n-type semiconductors to the copper foil conductor of the 1st ceramic layer. Finally, the 2nd ceramic layer is overlapped on the other side of the mold, so the copper foil conductor of the 2nd ceramic layer can be relatively aimed at the hole of the mold. Then high temperature is used to melt the composite copper-welding agent for serially connecting every p-type and n-type semiconductor to the copper foil conductor of the 2nd ceramic layer. Accordingly, the thermoelectric semiconductor is made. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7960258-B2 |
| priorityDate | 2005-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.