| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1c5f332dddaff914ed798fc54999535 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-4902 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2002-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c08f16fe359ab42d7082eee1a9ac28a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12ffa70f28d6098ea5b3f1e8dc762d71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_356415965f03d0344e56c1b6bb5596bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95abf3d1252f168c340737efdf9a80a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_512ec54a9434120ead66a2e077510c72 |
| publicationDate |
2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I279009-B |
| titleOfInvention |
A thin film multi-layer high Q transformer formed in a semiconductor substrate |
| abstract |
A thin-film multi-layer high Q transformer. To form an outer transformer winding a plurality of parallel first level metal runners are formed in a first insulating layer overlying the semiconductor substrate. A plurality of vertical conductive vias are formed in third and fourth insulating layers and in electrical communication with each end of the first level metal runners. A fourth insulating layer is disposed over the third insulating layer and additional vertical conductive vias and a fourth level metal runner are formed therein. Thus, the fourth level metal runners and the intervening vertical conductive vias connect each of the first level metal runners to form a continuously conductive structure having a generally helical shape. The inner winding of the transformer is similarly formed. A plurality of parallel second level metal runners are formed within the second insulating layer and a plurality of conductive vias and third level metal runners are formed within the third insulating layer to interconnect the plurality of second level metal runners to form a continuously conductive structure having a generally helical shape and disposed at least partially within the outer transformer winding. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9209129-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I510943-B |
| priorityDate |
2001-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |