http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I278619-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_442006254efb98c9cebec6ee5a08d5e8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 2004-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2aac2d9500ffcb7358f5a4b67293706a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7fb1ac646f1c43c320ab4fdd789e394 |
| publicationDate | 2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I278619-B |
| titleOfInvention | Gas sensor and the method of producing thereof |
| abstract | This invention provides a gas sensor, which comprises a substrate having a first surface and a second surface opposite to the first surface, a resistor structure formed in the second surface of the substrate and made of a semiconductor material with a plurality of carriers, at least two of contact electrodes connected with the resistor structure, and a sensor layer covered the resistor structure and produced by sol-gel process. This invention also provides a method for producing the gas sensor stated above, which comprises the steps of (a) providing a substrate, (b) providing a resistor structure in the substrate and made of a semiconductor material with a plurality of carriers, (c) forming two contact electrodes connected with the resistor structure, and (d) applying a gas sensor layer for covering the resistor structure by sol-gel process. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8501101-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I800751-B |
| priorityDate | 2004-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.