http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I278064-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2005-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edceb6a33433dcc1512890b447e8e718 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69d6883e3cdcf0c8574a4063dec24072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0dc617dffc84e8336655d7e2de017a0 |
| publicationDate | 2007-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I278064-B |
| titleOfInvention | Methods for forming dual damascene wiring using porogen containing sacrificial via filler material |
| abstract | Methods for fabricating dual damascene interconnect structures are provided in which a sacrificial material containing porogen (a pore forming agent) is used for filling via holes in an interlayer dielectric layer such that the sacrificial material can be transformed to porous material that can be quickly and efficiently removed from the via holes without damaging or removing the interlayer dielectric layer. |
| priorityDate | 2004-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.