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filingDate 2002-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9a8014cd30c299615a3d96154dd5b62
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publicationDate 2007-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I277220-B
titleOfInvention Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
abstract This invention provides a luminescent component which has a phosphor substrate having at least one element belonging to group 13 (IUPAC 1989) and comprising a nitride represented by the general formula: XN in which X is at least one element selected from among B, Al, Ga and In, a nitride represented by the general formula: XN:Y in which X is at least one element selected from among B, Al, Ga and In, and Y is at least one element selected from among Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, or a nitride represented by the general formula: XN:Y, Z in which X is at least one element selected from among B, Al, Ga and In, Y is at least one element selected from among Be, Mg, Ca, Sr, Ba, Zn, Cd and Hg, and Z is at least one element selected from among C, Si, Ge, Sn, Pb, O and S; and a method for preparing the luminescent component which comprises preparing the phosphor substrate by using supercritical ammonia, and forming a luminescent element on the substrate through vapor phase growth. The luminescent component has a wave length distribution for emitting a white light, and the like, and can be prepared in good yield.
priorityDate 2002-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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