abstract |
A kind of method for manufacturing semiconductor device is disclosed in the present invention. In the execution step of forming the resin film, the resin film for covering the electrode portion is formed on the semiconductor substrate that has the electrode portion. In the step of forming the opening portion, the opening portion is formed at the position corresponding to the electrode portion for the resin film. In the supplying step, the material for forming bumps is supplied to the opening portion. In the bump formation step, bumps are formed at the opening portion through the heating treatment. In the removing step, the resin film is removed. |