http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I273721-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f157e1ba59c4453c0fbfffa7326572ed |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042 |
| filingDate | 2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b687354f89165bb5c81e59e444645d13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc231a1ba8cf8088d94ed450539202ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22969141d9f5fe31f31cf44a2c6cf9b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d3e54608203a3366b19b412fb9714ce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a26e0b71aec1d3fc60d5c2efda5bf3ec |
| publicationDate | 2007-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I273721-B |
| titleOfInvention | Method of fabricating silicon quantum dots-sensitized layer of silicon quantum dots-sensitized solar cells |
| abstract | A method of fabricating silicon quantum dots-sensitized layer of silicon quantum dots-sensitized solar cells is disclosed. A substrate comprises an ITO (indium tin oxide) layer stacked up on the TiO2 layer is set in the reactive chamber. Using SiH4 as a precursor, Argon as a dilute or transmitted gas to complete process of forming a silicon quantum dots nucleation, and a growth layer and a surface passivation layer by chemical vapor deposition and multiple pulse to form a silicon quantum dots structure. And then depositing SiCx quantum dots thin film by single pulse to obtain a silicon quantum dots distributed layer on the surface of the titanium dioxide layer. Accordingly, the silicon quantum dots distributed layer can generate electron-hole pairs and limit the motion and direction of the electron by the silicon quantum dots structure to improve the light-electron transforming efficiency. |
| priorityDate | 2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.