| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-15 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate |
2002-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c29d380f0cefa977301df1c33ee1fb24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ce456a5cd4672db3908b1d75c04beb9 |
| publicationDate |
2007-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I272610-B |
| titleOfInvention |
Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element |
| abstract |
A magnetoresistive element includes first, second, and third magnetic layers and a nonmagnetic layer. The first magnetic layer is magnetized perpendicularly to the film surface. The second magnetic layer is magnetized perpendicularly to the film surface and has a coercive force higher than that of the first magnetic layer. The nonmagnetic layer is inserted between the first and second magnetic layers. The third magnetic layer has a coercive force higher than that of the first magnetic layer and is magnetized antiparallel to the second magnetic layer. A memory element and recording/reproduction method are also disclosed. |
| priorityDate |
2001-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |