| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66643
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7839
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28097 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2005-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3417f48f7e64235571cb9b4c1574fdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfd6af2623d6fa87dea494cb14af1ffd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c809df2efd5eca9da0c1cf00a4142a44 |
| publicationDate |
2007-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I270115-B |
| titleOfInvention |
Semiconductor device and integrated circuit |
| abstract |
A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a metal or metal silicide gate electrode having a work function of less than about 4.3 eV or greater than about 4.9 eV overlying the gate dielectric, a spacer having a thickness of less than about 100 Å on a side of the gate electrode, and a Schottky source/drain having a work function of less than about 4.3 eV or greater than about 4.9 eV wherein the Schottky source/drain region overlaps the gate electrode. The Schottky source/drain region preferably has a thickness of less than about 300 Å. |
| priorityDate |
2005-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |