http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I269408-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2005-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a4414b868f7f9a2e11285702113503e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37660544ea1c79c0f38175e0fd59f9c9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4efbb1a59e63c6e29508d64921e6ce1a |
| publicationDate | 2006-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I269408-B |
| titleOfInvention | Method of manufacturing a DRAM capable of avoiding bit line leakage |
| abstract | A method to make DRAM capable of avoiding bit line leakage is provided. The method comprise the steps of forming transistors on substrate, forming an insulating layer to cover the substrate and the transistors, forming a poly-silicon layer over the insulating layer, forming contact holes in the poly-silicon layer and the insulating layer, the contact holes touching the substrate, filling the contact holes with a conducting layer, and etching the surface of the conducting layer with O2/O3 plasma or an etchant of H2SO4, H2O2 and HF. |
| priorityDate | 2005-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.