http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I267930-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2005-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9462533ba2d39b578178049a49711d6a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19dc6d2904a8702374907de4c051e2b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56c108700ba88e7089f8a35b0d506000 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac22ebb5435a509ed151568b90582f36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7232f48d5f42e61cbc2cc3b53d31499 |
| publicationDate | 2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I267930-B |
| titleOfInvention | Interconnect and method of fabricating the same |
| abstract | A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a firs copper layer is deposited by a first ECP process at a 10 mA/cm<2> current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes an H, plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm<2> current density and second deposition step at a 60 mA/cm<2> current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Re performance are achieved by this method. |
| priorityDate | 2004-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.