http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I267865-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-16 |
| filingDate | 2004-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2aaaaf4604be01d4061cddb104005c |
| publicationDate | 2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I267865-B |
| titleOfInvention | Virtual ground nitride read only memory electrically erasable read only memory cell array and method for programming and erasing the same |
| abstract | A method id described for erasing a selected data region in an NROM cell that is a member of a virtual ground NROM EEPROM array. The method provides that erasing the selected data region does not disturb the program state of unselected data regions. |
| priorityDate | 2004-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.