http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I264825-B

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filingDate 2005-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad823d6a8699d89b5143b2b43fba5a19
publicationDate 2006-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I264825-B
titleOfInvention Microelectronic device having floating gate protective layer and method of manufacture therefor
abstract A method of manufacturing a microelectronic device including forming a memory cell having a floating sate located over a substrate, a dielectric laver over the floating gate, and a control gate located over a portion of the dielectric layer, wherein a portion of the dielectric layer is laterally disposed from the control gate. A protective layer is formed over the control gate and the dielectric layer. A mask having an opaque portion over the dielectric layer portion and an opening over the control gate is provided, and the protective layer is patterned employing the mask.
priorityDate 2004-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.