http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I264797-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2005-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95f7fbfc2829777af7ff35a9bea94ddd |
| publicationDate | 2006-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I264797-B |
| titleOfInvention | Self-alignment dual-layer silicon-metal nano-grain memory device, fabricating method thereof and memory containing the same |
| abstract | A nano-grain memory device and fabricating method thereof are provided. Poly-silicon, not right beneath the plurality of metal nano-grains and without shielding by the plurality of the metal nano-grains, is oxidized by using the method of selective oxidization. Poly-silicon beneath the plurality of metal nano-grains and shielded by the nano-grains are preserved to form dual-layer silicon-metal nano-grains in a self-alignment way. |
| priorityDate | 2005-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.