http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I263252-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59563abc37c2256ede54850668f487f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb0ddf5ca15d4bbdeaff030428921e63 |
| publicationDate | 2006-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I263252-B |
| titleOfInvention | Method for forming STI structures with controlled step height |
| abstract | STI structures with step height control are produced using a relatively thin nitrogen-containing layer formed over a substrate. The nitrogen-containing layer may consist of SiN and SiON films with a combined thickness of 900 angstroms or less. Trench openings are formed to extend through the nitrogen-containing layer and into the substrate. Chemical vapor deposition is used to form a dielectric such as an oxide within the trench openings and over the top surface of the nitrogen-containing layer. A polishing operation is used to partially polish the CVD dielectric layer leaving a reduced thickness over the nitrogen-containing layer, and then a dry etch is used to remove the dielectric from over the nitrogen-containing layer and uniformly recede the top surface of the dielectric within the trench. Dishing effects are avoided. The nitrogen-containing layer is removed to produce STI structures with step heights of less than 500 angstroms. |
| priorityDate | 2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.