| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-373 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2002-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6a251c6818a668e10e43862cf4a5319
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26bcfa8673ae391f2b91a7df5b31c8b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d55741626370f511c7540b3f590773cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c3fded2670238637beb4c6baa04c6f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41871fc0d5af3799ad2058c6474dc941 |
| publicationDate |
2006-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I261911-B |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device comprises a support substrate, a bulk device region, a silicon-on-insulator device region, and a boundary layer. The bulk device region is a region for forming a first device on a bulk growth layer of the support substrate. The silicon-on-insulator device region is a region for forming a device on a silicon layer on a buried insulation film of the support substrate. The boundary layer is located between the boundary of said regions. The device forming surfaces of the bulk device region and the silicon-on-insulator device region thereof are around the same height. |
| priorityDate |
2001-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |