| abstract |
In the invented manufacturing method of semiconductor integrated circuit device, high-speed operation circuit and high reliability circuit can be obtained on the same substrate in the semiconductor integrated circuit device provided with MIS transistors having gate insulation film composed of insulation film with high dielectric constant. In the logic portion A2 and I/O portion A3, the insulation film 7 with high dielectric constant on the diffusion region 12b of the MIS transistor is stripped and is followed by forming a low-resistance silicide layer 14 on its surface. Additionally, in the memory portion A1, high dielectric constant insulation film 7 instead of silicide layer 14 is formed on the diffusion region 12b of the MIS transistor so as to prevent causing damage to the semiconductor substrate when forming separation layer 13, silicide layer 14 and contact hole 17. |