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filingDate 2005-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8895db523c0c0fc2fa69ee667d1855f
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publicationDate 2006-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I261299-B
titleOfInvention Method for heat-treating silicon semiconductor substrate, and the silicon semiconductor substrate treated thereby
abstract To provide a method of freely controlling a proximity gettering structure, differing in request by device makers by optionally controlling M-shaped distribution form of BMD density, in the depth direction of a wafer, after being subjected to RTA in a nitrogen-containing atmosphere. A method of heat-treating a specified silicon wafer is provided to manufacture a silicon wafer, having no defective layer close to surface. In the heat-treatment method, a desired internal defect density distribution is formed by controlling the nitrogen density distribution in the depth direction of the silicon wafer to be heat-treated.
priorityDate 2004-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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