http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I260040-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81bbed339049c84138a09736b647d40e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbf226ec194859321f41136151f0bfce http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_818b9a9185d4d8b232edf8569b7120c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebe48ba344479754086d89e0ca81e31a |
| publicationDate | 2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I260040-B |
| titleOfInvention | The substrate structure for embedded component and process thereof |
| abstract | A substrate structure for embedded component with a core layer, a first stack layer, a second stack layer, at least an embedded component, and a plurality of plating through holes (PTH) is provided. The core layer includes a first surface and a second surface, and the core layer is stacked by a plurality of dielectric layers, where at least one dielectric layer is in semi-curing state. Besides, the first stack layer including a first surface circuit layer is located on the first surface, and the second stack layer including a second surface circuit layer is located on the second surface. The embedded component covered by the semi-curing dielectric layer is disposed in the core layer, and the PTHs penetrate the core layer, the first stack layer and the second stack layer respectively in order to make the embedded component electrically connected with the first stack layer and the second stack layer. |
| priorityDate | 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.