http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I259523-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2004-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e682582c1518b1e4112379fa6c525d1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79a2f0009a48dcbdd29a857e738c4785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a49b51fc6c05efbfa5e72844544394d9 |
| publicationDate | 2006-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I259523-B |
| titleOfInvention | Method for forming photoresist pattern and method for trimming photoresist pattern |
| abstract | A method for forming a photoresist pattern is described. A photoresist layer is formed over a substrate. An exposure process and a develop process are performed to pattern the photoresist layer so as to form a patterned photoresist layer. Then, a multiple trimming process is performed to trim the patterned photoresist layer, and a final photoresist pattern is formed. Especially, the multiple trimming process comprises at least one step of an alkaline solution treatment. The method can improve profile roughness, critical dimension uniformity and critical dimension shirking of the photoresist pattern. |
| priorityDate | 2004-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.