| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_435f7fafc4b931eae59de228af7272de |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3415
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3407 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2001-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe4ab51f8b98723808c2f570a5e62ad2 |
| publicationDate |
2006-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I258904-B |
| titleOfInvention |
Nitride semiconductor device with improved lifetime and high output power |
| abstract |
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer la made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side. |
| priorityDate |
2000-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |