| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2005-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acad4ae909676cc30968609bc74cb87d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb3010384e6abd4c7231c96ab628a632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef8e452f9dfef743451969e344f52e13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05eed88f2692e35cf089cee4f365c3e |
| publicationDate |
2006-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I258200-B |
| titleOfInvention |
Back end of line integration scheme |
| abstract |
A semiconductor structure comprises: a first inter-layer dielectric (ILD) over a substrate; a first metal layer; a plurality of second ILDs over the first ILD; and a plurality of second metal layers, each of the second metal layers is over one of the second ILDs. The first ILD is not cured. It has a k value of between about 2.5 and 3.0, a pore size of smaller than about 10 Å, and hardness of larger than about 1.5 Gpa. The semiconductor structure has reduced plasma charge from plasma curing. |
| priorityDate |
2004-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |