http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I258181-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 |
filingDate | 2005-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee565e0921f3f7c3d4efebf21724b53 |
publicationDate | 2006-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I258181-B |
titleOfInvention | Method for processing a photoresist layer |
abstract | A method of forming a photolithographic mask for use in fabricating a semiconductor device is provided. The method includes forming a layer of photoresist material on a wafer and exposing the photoresist material to a light source. The photoresist material is developed, and before the wafer dries, the wafer is cleaned with one or more cleaning liquids. The cleaning liquid may be a surfactant, an acid, a dissolved gas solution (e.g., CO2, SO2, SO3, NH3, NO2, or the like), deionized water, or the like. Thereafter, the wafer is dried. The wafer may be dried, for example, by a spin dry process, a gas purge process using, for example, compressed dry air, N2, CO2, Ar, or the like, or a drying alcohol such as IPA vapor. |
priorityDate | 2004-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.