| abstract |
A kind of thin and compact semiconductor device is provided in the present invention. At first, silicon wafer is prepared, and oxide film is formed on both main face and the back face of the silicon wafer. On the main face of the silicon wafer, the insulation film and plural through holes are selectively formed. Metal lamination layer is formed on the oxide film on the through hole bottom. The first metal film and the second metal film are formed on the metal lamination layer, so as to form the metal station. On the main face of one metal station among the metal stations, an electrode of the semiconductor chip formed with diode with its one electrode fixed, is connected with the other metal station through the conductive wire. Then, the insulation resin is used to cover the semiconductor chip or the conductive wire to remain the oxide film at the junction of the sealed body backside. The silicon wafer or oxide film is removed. After using an etching process to remove the oxide film of the resin backside, the electroplated metal film is then formed on the metal station surface exposed from the backside of the resin layer. The resin layer is cut-off in both longitudinal and lateral directions to form a semiconductor device. |