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filingDate 2004-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c6ea2c173b03832c6e600229d58f50b
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publicationDate 2006-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I255565-B
titleOfInvention Nitride semiconductor light-emitting diode chip and method of manufacturing the same
abstract The nitride-semiconductor light-emitting diode chip includes a light-transmitting substrate (101) and a nitride-semiconductor laminated structure (102 to 106) formed on the top face of the substrate. The nitride-semiconductor laminated structure includes a light-emitting layer (104) and a plurality of other semiconductor layers. The substrate (101) does not depend on the face azimuth and has a thickness of 120 mum or larger. Consequently, the extraction efficiency of a light from the chip is improved. At least one of the parting faces of the chip is inclined to a surface orthogonal with respect to a substrate surface, and the underside of the substrate also has an area smaller than that of the upper-side region of the nitride-semiconductor laminated structure, thus improving the extraction efficiency of the light from the chip.
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Total number of triples: 31.