http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I254409-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72ed91cb20a3ca510bb7e85d7fae504a
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2005-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21871bb3f029616093f8042ab068e950
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b3ea08d20e165737d6c1a6e607e04b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35e5fd975fdf2f2e49d87df0972bcedb
publicationDate 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I254409-B
titleOfInvention Semiconductor device having self-aligned contact and manufacturing method thereof
abstract A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of the each gate structure. Multiple second spacers are formed on the sidewalls of the each isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings.
priorityDate 2005-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID452498775
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID159374
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517
http://rdf.ncbi.nlm.nih.gov/pubchem/taxonomy/TAXID224708
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520403
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414004986
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82832
http://rdf.ncbi.nlm.nih.gov/pubchem/anatomy/ANATOMYID224708
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419587756
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID181977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758

Total number of triples: 30.