http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I254409-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_72ed91cb20a3ca510bb7e85d7fae504a |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
filingDate | 2005-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21871bb3f029616093f8042ab068e950 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b3ea08d20e165737d6c1a6e607e04b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35e5fd975fdf2f2e49d87df0972bcedb |
publicationDate | 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I254409-B |
titleOfInvention | Semiconductor device having self-aligned contact and manufacturing method thereof |
abstract | A method of manufacturing semiconductor devices having self-aligned contacts is provided. Multiple isolation structures are formed on the substrate to define an active area. Multiple gate structures are formed on the substrate. Multiple doped areas are formed in the substrate beside each gate structure. Multiple first spacers are formed on the sidewalls of the each gate structure. Multiple second spacers are formed on the sidewalls of the each isolation structure. A dielectric layer is formed on the substrate. Then, a self-aligned process is performed to form multiple contact openings in the dielectric layer between the gate structures. The conductive material is filled in the contact openings. |
priorityDate | 2005-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.