http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I254359-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
filingDate 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a7eeaf76c2b3ae72b035db237eee41d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de03a0e54c9a100d6f86c832ba3152c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_199f08ab628dfe115659fde81f7058f3
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publicationDate 2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I254359-B
titleOfInvention Improved mold releasing layer of reverse imprinting lithography and the applying method of the same
abstract An improved mold-releasing layer of reverse imprinting lithography is provided by present invention for resolving the problems that a resist did not fill the grooves of an imprinting mold treated by an anti-adhesive layer in a etch process. The improved mold-releasing layer of reverse imprinting lithography comprises an anti-adhesive layer formed on the surface of the pattern preformed on an imprinting mold, and a surfactant-layer spread on the anti-adhesive layer. By this way, the resist would was completely filled in the micro/nano-features on the mold. Then the pattern of mold was transferred to any substrate with high fidelity by contacting process. This improved reverse imprinting can control the spin-coating parameter to tune the thickness of residual layer and apply to large area substrate, including hard or flexible substrate.
priorityDate 2005-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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