| abstract |
A resist pattern formation method which is suitable for production of system LCDs, can reduce variation in resist pattern size. The method includes (1) a step for coating a positive photoresist composition on a substrate to form a coating, (2) a step for prebaking the substrate with the coating formed thereon, to form a resist coating film on the substrate, (3) a step for forming an antireflective film on the resist coating film, (4) subjecting the resist coating film to selective exposure by using a mask having both a mask pattern for formation of resist patterns of less than 2.0 mum and a mask pattern for formation of resist patterns of more than 2.0 mum, (5) a step of removing the antireflective film after selective exposure, and (6) a step of subjecting the resist coating film, after the selective exposure, to a developing treatment using an aqueous alkali solution. |