| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e68936d3fb435785c9dcd044cfe3b5d4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C26-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C26-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-02 |
| filingDate |
2001-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_185b38927d220e4d52e042ad51b48d0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90970de53c1098234c58ac3c257daf11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f1ec270dc73ddf7632879b7a47d8753
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ccb3127cb9a27f09e1d9eb2ab3a252b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b3fb4913fd3553156c472dd03650ff4 |
| publicationDate |
2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I253738-B |
| titleOfInvention |
Method to form copper wiring films |
| abstract |
The present invention provides a method to form copper wiring films to improve the adhesion between the first copper film and the diffusion barrier substrate film. Even in the CMP processing of semiconductor manufacturing process, the peeling of Cu film wiring is prevented with high reliability. The method includes the steps of: forming a first copper film by means of a CVD method on an insulating diffusion barrier film, the insulating diffusion barrier film has been formed on a semiconductor substrate and in which a concavity has been established; heating the first copper film to a temperature within the range from 200 to 500 DEG C; and subsequently forming a second copper film on the first copper film by a plating method using the first copper film as an electrode. |
| priorityDate |
2001-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |