http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I253711-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f275523b7403231a10ce3067e717824 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e3d1a11f744d8e01a8b0e0eff47738a |
| publicationDate | 2006-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I253711-B |
| titleOfInvention | Elimination of CuAl2 from aluminum based metallization features on an integrated circuit chip |
| abstract | A method of fabricating an Al-Cu alloy based terminal metal structure for a semiconductor device is disclosed for preventing formation of any CuAl2 theta phase precipitates on the bonding pads. The terminal metal layer is formed by a conventional process, in which a plurality of bonding pads are patterned in the Al-Cu alloy based terminal metal layer. A passivation layer, generally silicon nitride, is deposited over the terminal metal layer and patterned to expose the bonding pads by dry plasma etching. Then the post-etch bake step is conducted at a temperature higher than the solubility limit of Cu in Al for the given Al-Cu alloy composition to prevent formation of any CuAl2 theta phase precipitates on the Al-Cu alloy based bonding pads. |
| priorityDate | 2004-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.