| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2004-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceaff3aab2c662cc1dcabe6dfe116a28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ec89c4b1b00a0e2a98295b2127d77f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d221c08ce427c0770e04dc86e307ce71 |
| publicationDate |
2006-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I252538-B |
| titleOfInvention |
Method of removing photoresist |
| abstract |
A method of removing photoresist. The method is applied to removing photoresist after the processing of ion implantation. The method includes providing a substrate, forming a dielectric layer above the substrate, and forming a photoresist layer above the dielectric layer. After the photoresist layer is patterned, the photoresist layer is used as a mask for ion implantation and then ashed, wherein a plasma used to the ashing step contains oxygen and the compound of fluorine. A method of removing photoresist after the processing of etching is also disclosed. |
| priorityDate |
2003-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |