http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I252521-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-193 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-0009 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F1-404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01F7-66 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F1-40 |
| filingDate | 2003-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4276f32663192b6049ab353c71430da2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69eee837900389dc28f60a98cfd12fda http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e9c8a001f1e50404403c74b93ea123e |
| publicationDate | 2006-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I252521-B |
| titleOfInvention | Ferromagnetic IV group semiconductor, ferromagnetic III-V group compound semiconductor or ferromagnetic III-VI group compound semiconductor and adjustment method for their ferromagnetic characteristics |
| abstract | Disclosed is a group II-VI or III-V compound-based single-crystal ferromagnetic material, wherein at least one transition metal selected from the group consisting of V and Cr is substituted for or for the group II element of a group II-VI compound selected from the group consisting of ZnTe, ZnSe, ZnS, CdTe, CdSe and CdS, or for the group III element of a group III-V compound selected from the group consisting of GsAs, InAs, Inp and GaP, to form a mixed crystal. Further, at least one transition metal selected from the group consisting of V, Cr and Mn is substituted for the group III element of a group III-V compound selected from the group consisting of GaN, AlN, InN and BN, to form a mixed crystal. Another transition metal element or n-type or p-type dopant is added to adjust ferromagnetic transition temperature or another ferromagnetic characteristic. |
| priorityDate | 2002-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.