http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I252375-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-31794 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-20 |
| filingDate | 2003-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec0cf4a407604f826bf2eabb2520cf0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2b71ba9be6a807980cf2276ae2587f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c296b4bd171440ff616ec3418d4aceab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e4dec0779a5ac895310b45cebcc3641 |
| publicationDate | 2006-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I252375-B |
| titleOfInvention | Mask pattern correction method, semiconductor device manufacturing method, mask manufacturing method, and mask |
| abstract | A mask pattern correction method by which the position of a pattern is prevented from varying because of deformation of a mask due to the gravity, a mask manufacturing method and a mask, and a semiconductor device manufacturing method by which a fine pattern with high precision is formed are provided. The mask pattern correction method comprises the steps of creating first position data representing the positions of marks that a first thin film has when the first thin film is supported with a first surface up, creating second position data representing the positions of the marks when the first thin film is supported with a second surface up, defining a transfer function for converting the first position data into the second position data, and correcting the mask pattern of the shape of an exposure beam transmitting part formed in a second thin film by using an inverse function of the transfer function. A mask manufacturing method, a mask manufactured by the method, and a semiconductor device manufacturing method using the mask are disclosed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I397722-B |
| priorityDate | 2002-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.