http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I251907-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2004-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f734d242ead46e63e7fbe541d7b0b2e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c98eceefa9b29e65f9bd4364b5bd534 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f780fc559680e4ef368aad4e9264f9e2 |
| publicationDate | 2006-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I251907-B |
| titleOfInvention | Flash memory process with high voltage LDMOS emmbedded |
| abstract | A method of embedding the forming of peripheral devices such as HV-LDMOS into the forming of flash memory is presented. A layered structure is formed with a first insulating layer formed on a substrate, and a poly silicon formed on the first insulating layer in the flash memory region. A mask layer is formed. Openings are formed in the flash memory region and in the peripheral region. A local oxidation of silicon (LOCOS) is performed to form thick oxides on poly silicon, and a field oxide on silicon substrate respectively. The mask layer is removed. A control gate and a control gate oxide are formed on the thick oxide and the poly silicon. A gate electrode is formed with at least one end residing on a field oxide so that the resulting HV-LDMOS has a high breakdown voltage. Spacers and a source/drain of the flash cells and HV-LDMOSs are then formed. |
| priorityDate | 2004-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.