http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I250654-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2005-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7118270e2a0807e411d494d3ac3e58b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_027655b69a99d7dc9edafdd21796228e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e126b054ed5a8507fa72f9a8aabe17b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a77fdef05bf6e1002d01418a75387ad |
| publicationDate | 2006-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I250654-B |
| titleOfInvention | Amorphous silicon thin film transistor with dual gate structures and manufacturing method thereof |
| abstract | An amorphous silicon thin film transistor (a-Si TFT) with dual gate structures and a manufacturing method thereof are provided. The a-Si TFT comprises a substrate, a first gate, an amorphous silicon channel layer, a source, a drain, and a second gate. The first gate is formed on the substrate. The amorphous silicon channel layer is formed above the first gate. The source and the drain are formed above the amorphous silicon channel layer and correspond to the two ends of the first gate. The source and the drain are contacted with the two ends of the amorphous silicon channel layer. The second gate is formed above the source and the drain and corresponds to the first gate. The second gate is electrically connected to the first gate via a contact hole. The peripheral of the second gate overlaps part of that of the source and the drain. Moreover, the a-Si island is completely located inside the first gate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9054203-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I470806-B |
| priorityDate | 2005-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.