http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I246193-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_654bb50aec0ef89185d1f85c709490ff |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0814 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08 |
| filingDate | 2003-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a74bb83ddc0bc444f2755838aa32e92 |
| publicationDate | 2005-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I246193-B |
| titleOfInvention | Semiconductor devices using minority carrier controlling substances |
| abstract | A precision low-power crystalline semiconductor device is disclosed that has a crystalline structure. The semiconductor device has a semiconductor substrate layer of, for example N-type conductivity. The device also has a first region of doped semiconductor material that is also, for example, N-conductivity type. Further, the device has a second region of a doped semiconductor material having a conductivity that is, for example, P-type conductivity. Consistent with the present invention, the second region forms a P/N junction with the first region. Additionally, a noise-reducing minority carrier controlling substance is provided within the crystalline structure of the semiconductor device, and the substance imparts an operational parameter of a low-noise breakdown voltage at reverse currents below a threshold current. |
| priorityDate | 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.