http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I246164-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ddbd9538efce6e134d471b912946264e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2001-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_956ae09d21917abad049128faab6f03d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_353eb707521925058d64baede7fa5633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9291df12d9a4411c7ffd1b7c6227ceb7 |
| publicationDate | 2005-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I246164-B |
| titleOfInvention | Manufacturing method for capacitor of DRAM |
| abstract | The present invention provides a manufacturing method for capacitor of DRAM, which includes the following steps: forming a wordline conductive structure on a substrate; forming a first dielectric on the structure, and forming a landing pad electrically connected to the substrate; sequentially forming the bitline conductive structure and a second dielectric on the first dielectric; next, forming a plug electrically connected to the landing pad in the second dielectric, in which the forming method employs the high density plasma chemical vapor deposition method, the plasma enhanced chemical vapor deposition method, or the low pressure chemical vapor deposition method; then, forming a sacrificial layer on the second dielectric, which is made of SOG, BPSG, or porous SiO2; and, patterning the sacrificial layer to form an opening exposing the plug; forming the cylindrical conductive layer in the opening as the lower electrode of the capacitor; then, removing the sacrificial layer; and, sequentially forming the capacitive dielectric and the conductive layer on the cylindrical conductive layer. |
| priorityDate | 2001-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.