http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I241365-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4efee27937b4a512f45809fed5293747 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 |
| filingDate | 2000-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93b81be9706925b93ac90b820c0fb660 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06c35b2ed3dc27d71dd1d1467982500d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36d42fec2e7c6b4672aa91bbb2f909d2 |
| publicationDate | 2005-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I241365-B |
| titleOfInvention | Barium doping of molten silicon for use in crystal growing process |
| abstract | A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5% gases insoluble in silicon. During melting and throughout the crystal growing process the barium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal. |
| priorityDate | 1999-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.