http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I240364-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764 |
| filingDate | 2004-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b7750bb56061c75454aa5f0655328ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5720112c3192d045a3bba428926c28a6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b03eb1ccb1f78c899ee3ab64d2ea3009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a7f40c5ecc3b7345deb0d0340b739d |
| publicationDate | 2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I240364-B |
| titleOfInvention | Method for repairing sidewall seam of contact |
| abstract | The present invention discloses a method for repairing sidewall seam of contact, which includes the following steps of: first providing a substrate deposited a dielectric layer thereon; next defining a dielectric layer; forming at least one contact in the dielectric layer, and exposing the substrate to form at least one seam in the substrate of the contact sidewall; then adaptively forming a SiN layer or SiO layer on the contact sidewall and at the bottom thereof and filling into the seam; finally, removing the SiN layer or SiO layer on the contact sidewall and at the bottom thereof and leaving the SiN layer or SiO layer in the seam. |
| priorityDate | 2004-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.