http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I240314-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2001-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e45c9128a2ebb2960ba3bd490bb8b19b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f9407049bd305c664cfdef69db83a61 |
| publicationDate | 2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I240314-B |
| titleOfInvention | Manufacturing method for gate oxide |
| abstract | The present invention provides a manufacturing method for gate oxide, which first conducts an annealing process in an inert gas environment, such as Helium, before the step of growing gate oxide on a wafer substrate, so as to remove, prohibit, or condense the native oxide previously formed on the wafer substrate. The manufacturing method for gate oxide according to the present invention can help fabricate the super-slim gate oxide with thinner thickness and excellent quality, which is beneficial to the reduction of line width of integrated circuit, and suitable for the process of gate oxide using material with high dielectric coefficient. |
| priorityDate | 2001-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.