http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I240304-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate | 2003-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5992abc8afbe1693b9b83609318482f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ec907ab9238d95d4ee9fb668ae802d8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fd1ead487a8d56dc371172324c0fc42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1402d395ec792eb77479ea7bd351920 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5719b5ace1d9eddf581c899aa9e459ca |
| publicationDate | 2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I240304-B |
| titleOfInvention | Silicon-on-insulator ULSI devices with multiple silicon film thickness |
| abstract | A method of forming a multiple-thickness semiconductor-on-insulator, comprising the following steps. A wafer is provided comprising a semiconductor film (having at least two regions) overlying a buried insulator layer overlying a substrate. The semiconductor film within one of the at least two resigns is masked to provide at least one semiconductor film masked portion having a first thickness, leaving exposed the semiconductor film within at least one of the at least two regions to provide at least one semiconductor film exposed portion having first thickness. In one embodiment, at least a portion of the at least one exposed semiconductor film portion. Then the oxidized portion of the exposed semiconductor film is removed to leave a portion of the semiconductor film having a second thickness less than the first thickness. |
| priorityDate | 2003-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.