Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-486 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-54 |
filingDate |
2004-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2005-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bc944ddfc5986decaee52c80df7c400 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0332484f4e0ff3143a3e7e60c27f9a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75ae15eb32cc16ed998fc5ca18645982 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b4334fc4dbd62b40423f33a56676a5d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e3de075e5087c7a6a5550d2bb8b6b92 |
publicationDate |
2005-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I239670-B |
titleOfInvention |
Package structure of light emitting diode and its manufacture method |
abstract |
The invention provides a package structure of light-emitting diode and its manufacture method, in which SOI (silicon-on-insulator) with an insulating layer sandwiched between a two-layered silicon substrate is used as a packaging substrate. On the SOI, a grooved reflective base and an isolation slot that can divide negative electrode and positive electrode from the substrate are formed, then a plurality of metal conductive wires are electrically connected to the two-layered silicon substrate. The LED die is then disposed on the grooved reflective base and gets electrically connected to the positive and negative electrodes of the SOI substrate through the metal conductive wires. Thereby the invention is able to achieve the package operation of light-emitting diode, furthermore, to enhance the temperature tolerance and improve the efficiency of heat dissipation as well as simply the manufacture procedure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9368705-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100392855-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8698166-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I476946-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I382564-B |
priorityDate |
2004-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |