http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I239529-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-808 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 |
| filingDate | 2003-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f75cd59f27147c42857fb1c64c3339f9 |
| publicationDate | 2005-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I239529-B |
| titleOfInvention | Semiconductor memory device |
| abstract | A semiconductor memory device (1) comprises a normal RAM (2) and a redundancy RAM (3) provided independently from the normal RAM (2), serving as a redundancy circuit, and a control unit (4) for replacing a normal memory cell array of the normal RAM (2) by a redundancy memory cell array of the redundancy RAM (3). The control unit (4) can replace the normal memory cell array by some of a plurality of redundancy memory cells constituting the redundancy memory cell array. Therefore, without using a redundancy memory cell which has a defect, a defective normal memory cell array can be replaced. As a result, a manufacturing yield of the semiconductor memory device (1) can be improved. With this constitution provided is a technique to improve the manufacturing yield of a semiconductor memory device which comprises a redundancy circuit. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7907458-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8363495-B2 |
| priorityDate | 2002-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.