http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I238415-B

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filingDate 2004-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e6367b97aef4fdda43af04629e4cb0b
publicationDate 2005-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I238415-B
titleOfInvention Nonvolatile semiconductor memory device and control method therefor
abstract This invention is provided to remarkably shorten a data write time on a nonvolatile semiconductor memory device. In a nonvolatile semiconductor memory device according to this invention, a memory array is divided into a first memory cell array MAT having memory cells to be programmed to write true data in each of them and a second memory cell array MAR having memory cells to be programmed to write reversed data of the true data in each of them, a column decoder 20 is provided to simultaneously select a bit line BLtj connected with a memory cell Mtj in which true data is written and a bit line BLrj connected with a memory cell Mrj in which reversed data of the true data is written, and a differential amplifier 23 is provided to amplify the difference between two signals outputted to the pair of bit lines BLtj, BLrj and output the result to an I/O line 24.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I485702-B
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Total number of triples: 31.