http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I238200-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f08f9f99db22bcca24642899da9fba65 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 |
| filingDate | 2002-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed54033dd618a3874da10ff81e49c23a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51c1bd0d66839eaae1caa38845f4e850 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ad355aa1d45b7432e7c41b1d1321213 |
| publicationDate | 2005-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I238200-B |
| titleOfInvention | Method of using high density plasma chemical vapor phase deposition to form film with low dielectric constant |
| abstract | The present invention discloses a method of using a high density plasma chemical vapor phase deposition (CVD) process to form a film with a low dielectric constant, which comprises: providing a substrate; sequentially forming a barrier layer and a metal line layer on the substrate; etching the barrier layer and the metal line layer to define a plurality of metal lines; and applying a high density plasma CVD process to form a silicon carbide type film covering the metal lines. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115938926-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115938926-B |
| priorityDate | 2002-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.