| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2004-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9e8e1197f151f99009f6954ad413bda
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_060e785d27bab054d2a0986a4f145296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b97ced22f030b74dd2bf5e62fc18d72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b06a400eae080d0e14452f29735ad540
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f3c97d8cb3114cf9c8349181c60fa9b |
| publicationDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I237868-B |
| titleOfInvention |
Method for fabricating a dielectric layer |
| abstract |
A method for fabricating a dielectric layer is to dope carbon and halogen to silicate glass. The dielectric constant of the dielectric layer can be lowered and its mechanical characteristics are better. By introducing an organosilane and a silicon halide into a CVD chamber, which is controlled within preferred range of temperature, pressure and RF power, the dielectric constant is controlled under 3.3. The Hardness and Modulus of the dielectric layer is better than that of conventional materials. |
| priorityDate |
2003-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |