http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I236456-B

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filingDate 2003-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I236456-B
titleOfInvention Method for preparation of aluminum oxide thin film
abstract AN aluminum oxide film is formed on a substrate by a process comprising (A) bring the vapor of a dialkylaluminum alkoxide into contact with the substrate mounted in a deposition reactor so that an aluminum-containing adsorption layer is formed on the substrate; (B) removing the unreacted aluminum compound and by-products from the reactor; (C) introducing an oxygen source into the reactor so that the oxygen source reacts with the aluminum-containing adsorption layer to form an aluminum oxide layer; and (D) removing the unreacted oxygen source and by-products from the reactor.
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