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filingDate 2001-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63db0ad9dcfec7b8569056e0c644d1b9
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publicationDate 2005-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I236398-B
titleOfInvention Abrasive material
abstract An object of the present invention is to provide a polishing body, wherein the abrasives in the polishing body are extremely dispersed well, which provides stable polishing performance in the polishing process, and which can effectively reduce the occurrence of scratches even in a case where a large quantity of the abrasives are contained. A polishing part constituting the polishing body in the invention is obtained by loading predetermined amounts of butadiene, styrene, methyl methacrylate, itaconic acid, acrylic acid, alpha-methylstyrene dimer, and t-dodecyl mercaptan in an autoclave, making the mixture react for 16 hours at 75 DEG C to obtain an emulsion wherein a copolymer is dispersed, adjusting this emulsion to pH 8.5, incorporating cerium oxide powder with an average primary particle diameter of 0.3 mum and stirring to obtain an aqueous dispersion, drying this aqueous dispersion by spreading it thinly across a film, and mold pressing the dried product obtained. The above-mentioned polishing part may have a crosslinked structure. The polishing body in the invention can be used favorably in a polishing pad and the like, for polishing the surface of a semiconductor wafer or the like.
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priorityDate 2000-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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